Auger generation as an intrinsic limit to tunneling field-effect transistor performance
- James T. Teherani
- Sapan Agarwal
- et al.
- 2016
- Journal of Applied Physics
Publications
5 results for James T. Teherani
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- IEEE Electron Device Letters
High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- Winston Chern
- Pouya Hashemi
- et al.
- 2012
- IEDM 2012
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor
- Paul M. Solomon
- Isaac Lauer
- et al.
- 2011
- IEEE Electron Device Letters