Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- ASICON 2017
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47 results for Richard G. Southwick
Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IRPS 2017
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Engineering the electronic defect bands at the Si1-xGex/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si1-xGex pFETs
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2016
- IEDM 2016
Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
Observation of strong reflection of electron waves exiting a ballistic channel at low energy
- Canute I. Vaz
- Changze Liu
- et al.
- 2016
- AIP Advances
Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies
- Harold Hughes
- Patrick McMarr
- et al.
- 2015
- REDW/NSREC 2015