Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2016
- J. Micro/Nanolithogr. MEMS MOEMS
Paper
Publications
7 results for Atsuko Yamaguchi
Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2014
- SPIE Advanced Lithography 2014
Conference paperDose-focus monitor technique using CD-SEM and application to local variation analysis
- Shoji Hotta
- Timothy Brunner
- et al.
- 2012
- SPIE Advanced Lithography 2012
Conference paperDose-focus monitor technique using a critical-dimension scanning electron microscope and its application to local variation analysis
- Shoji Hotta
- Timothy Brunner
- et al.
- 2012
- J. Micro/Nanolithogr. MEMS MOEMS
PaperCritical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes
- Shoji Hotta
- Takumichi Sutani
- et al.
- 2011
- J. Micro/Nanolithogr. MEMS MOEMS
PaperCD-SEM metrology of spike detection on sub-40 nm contact holes
- Yoshinori Momonoi
- Taro Osabe
- et al.
- 2010
- SPIE Advanced Lithography 2010
Conference paperSpatial signature in local overlay measurements - "what CD-SEM can tell us and optical measurements can not"
- Scott Halle
- Daniel Moore
- et al.
- 2010
- SPIE Advanced Lithography 2010
Conference paper