Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2016
- J. Micro/Nanolithogr. MEMS MOEMS
Paper
Publications
3 results for Shunsuke Koshihara
Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2015
- SPIE Advanced Lithography 2015
Conference paperPrecise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2014
- SPIE Advanced Lithography 2014
Conference paper