Publications

10 results for Michael Shinosky

Layout dependence of gate dielectric TDDB in HKMG FinFET technology
- - Wen Liu
  - Ernest Y. Wu
  - et al.
- 2016
- IRPS 2016
Breakdown data generation and in-die deconvolution methodology to address BEOL and MOL dielectric breakdown challenges
- - F. Chen
  - Carole Graas
  - et al.
- 2015
- Microelectronics Reliability
A method for rapid screening of various low-k TDDB models
- - F. Chen
  - Carole Graas
  - et al.
- 2015
- IRPS 2015
Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- - Fen Chen
  - Michael Shinosky
  - et al.
- 2013
- IRPS 2013
Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion
- - Fen Chen
  - Michael Shinosky
  - et al.
- 2012
- Applied Physics Letters
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- - Fen Chen
  - Jeffrey Gambino
  - et al.
- 2012
- IRPS 2012
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- - F. Chen
  - Michael Shinosky
  - et al.
- 2011
- IRPS 2011
A comparative study of ULK conduction mechanisms and TDDB characteristics for Cu interconnects with and without CoWP metal cap at 32nm technology
- - F. Chen
  - E. Huang
  - et al.
- 2010
- IITC 2010
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- - F. Chen
  - M. Shinosky
  - et al.
- 2009
- IRPS 2009
Line edge roughness and spacing effect on low-k TDDB characteristics
- - F. Chen
  - J.R. Lloyd
  - et al.
- 2008
- IRPS 2008