Layout dependence of gate dielectric TDDB in HKMG FinFET technologyWen LiuErnest Y. Wuet al.2016IRPS 2016
A case study of electromigration reliability: From design point to system operationsBaozhen LiPaul Mulleret al.2015IRPS 2015
Electromigration challenges for advanced on-chip Cu interconnectsBaozhen LiCathryn Christiansenet al.2014Microelectronics Reliability
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOSD.P. IoannouK. Zhaoet al.2011IRPS 2011
Critical ultra low-k TDDB reliability issues for advanced CMOS technologiesF. ChenM. Shinoskyet al.2009IRPS 2009