Layout dependence of gate dielectric TDDB in HKMG FinFET technologyWen LiuErnest Y. Wuet al.2016IRPS 2016Conference paper
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallizationC.-H.C-H. LinBrian Greeneet al.2014IEDM 2014Conference paper
Process dependence of AC/DC PBTI in HKMG n-MOSFETsWen LiuGiuseppe La Rosaet al.2014IRPS 2014Conference paper