Publications

149 results for John A. Ott

Layer transfer of bulk gallium nitride by controlled spalling
- - Stephen W. Bedell
  - Paul Lauro
  - et al.
- 2017
- Journal of Applied Physics
High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes
- - Shu Jen Han
  - Jianshi Tang
  - et al.
- 2017
- Nature Nanotechnology
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- VLSI-TSA 2017
High-Q magnetic inductors for high efficiency on-chip power conversion
- - Naigang Wang
  - Bruce Doris
  - et al.
- 2016
- IEDM 2016
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2016
- PRiME/ECS Meeting 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2016
- VLSI Technology 2016
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- - Pouya Hashemi
  - Kam-Leung Lee
  - et al.
- 2016
- VLSI Technology 2016
Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag₂ZnSnSe₄ Absorber
- - Talia S. Gershon
  - Kasra Sardashti
  - et al.
- 2016
- Advanced Energy Materials
Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
- - R. Muthinti
  - Nicolas Loubet
  - et al.
- 2016
- SPIE Advanced Lithography 2016
High-mobility high-Ge-content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Circuits 2015