Publications

149 results for John A. Ott

Strained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- - A. Reznicek
  - S.W. Bedell
  - et al.
- 2004
- ECS Meeting 2004
On the integration of CMOS with hybrid crystal orientations
- - M. Yang
  - V. Chan
  - et al.
- 2004
- VLSI Technology 2004
Channel design and mobility enhancement in strained germanium buried channel MOSFETs
- - H. Shang
  - J.O. Chu
  - et al.
- 2004
- VLSI Technology 2004
Strain relaxation and threading dislocation density in helium-implanted and annealed Si _1-xGe _x/Si( 100) heterostructures
- - J. Cai
  - P.M. Mooney
  - et al.
- 2004
- Journal of Applied Physics
Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot
- - L.J. Klein
  - K.A. Slinker
  - et al.
- 2004
- Applied Physics Letters
High-performance SiGe MODFET technology
- - S.J. Koester
  - J.O. Chu
  - et al.
- 2004
- MRS Proceedings 2004
Influence of He implantation conditions on strain relaxation and threading dislocation density in Si_0.8Ge_0.2 virtual substrates
- - J. Cai
  - P.M. Mooney
  - et al.
- 2004
- MRS Proceedings 2004
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- - K. Rim
  - K.K. Chan
  - et al.
- 2003
- IEDM 2003
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- - Jakub Kedzierski
  - Diane Boyd
  - et al.
- 2003
- IEDM 2003
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- - M. Yang
  - M. Ieong
  - et al.
- 2003
- IEDM 2003