Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer
- Rajas Mathkari
- Maximilian Liehr
- et al.
- 2025
- Materials Science in Semiconductor Processing
Paper
Publications
6 results for Maximilian Liehr
Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning
- Minhaz Abedin
- Nanbo Gong
- et al.
- 2023
- Scientific Reports
PaperExploring Model Stability of Deep Neural Networks for Reliable RRAM-Based In-Memory Acceleration
- Gokul Krishnan
- Li Yang
- et al.
- 2022
- IEEE TC
PaperHybrid RRAM/SRAM in-Memory Computing for Robust DNN Acceleration
- Gokul Krishnan
- Zhenyu Wang
- et al.
- 2022
- IEEE TCADIS
PaperDesign Limits of In-Memory Computing: Beyond the Crossbar
- Gokul Krishnan
- Jubin Hazra
- et al.
- 2021
- EDTM 2021
Conference paperRobust RRAM-based In-Memory Computing in Light of Model Stability
- Gokul Krishnan
- Jingbo Sun
- et al.
- 2021
- IRPS 2021
Conference paper