A 250 GHz millimeter wave amplifier MMIC based on 30 nm metamorphic InGaAs MOSFET technologyArnulf LeutherMatthias Ohlroggeet al.2017EuMIC 2017Conference paper
80 nm InGaAs MOSFET W-band low noise amplifierArnulf LeutherMatthias Ohlroggeet al.2017IMS 2017Conference paper