Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy
- Z.M. Rittersma
- J.C. Hooker
- et al.
- 2006
- Journal of Applied Physics
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92 results for J.P. Locquet
Structural domains in antiferromagnetic LaFeO3 thin films
- Jin Won Seo
- Christel Dieker
- et al.
- 2006
- Journal of Materials Research
Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity
- G.J. Norga
- C. Marchiori
- et al.
- 2005
- Applied Physics Letters
Hf O2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
- J.W. Seo
- Ch. Dieker
- et al.
- 2005
- Applied Physics Letters
Domain-size-dependent exchange bias in Co/LaFeO 3
- A. Scholl
- F. Nolting
- et al.
- 2004
- Applied Physics Letters
Orientation selection in functional oxide thin films
- G.J. Norga
- L. Fé
- et al.
- 2004
- Journal of the European Ceramic Society
Interface formation and defect structures in epitaxial La 2Zr2O7 thin films on (111) Si
- J.W. Seo
- J. Fompeyrine
- et al.
- 2003
- Applied Physics Letters
Growth of single unit-cell superconducting La2-xSr xCuO4 films
- A. Rüfenacht
- P. Chappatte
- et al.
- 2003
- Solid-State Electronics
Growth of perovskites with crystalline interfaces on Si(100)
- G.J. Norga
- A. Guiller
- et al.
- 2003
- MRS Proceedings 2003
Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer
- D. Halley
- G.J. Norga
- et al.
- 2003
- Journal of Applied Physics