A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- Herwig Hahn
- Veeresh Deshpande
- et al.
- 2017
- IEDM 2017
Conference paper
Publications
7 results for L. Selmi
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
- George Zerveas
- E. Caruso
- et al.
- 2016
- Solid-State Electronics
PaperAn innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
- L. De Michielis
- N. Daǧtekin
- et al.
- 2013
- Applied Physics Letters
PaperCorner effect and local volume inversion in SiNW FETs
- Luca De Michielis
- Kirsten Emilie Moselund
- et al.
- 2011
- IEEE TNANO
PaperImpact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters
PaperMonitoring hot-carrier degradation in SOI MOSFET's by hot-carrier luminescence techniques
- Luca Selmi
- Maura Pavesi
- et al.
- 1998
- IEEE Transactions on Electron Devices
PaperINVESTIGATION OF HOT ELECTRON LUMINESCENCE IN SILICON BY MEANS OF DUAL-GATE MOSFET's
- Luca Selmi
- Hon-Sum Wong
- et al.
- 1993
- IEDM 1993
Conference paper