Theoretical and experimental analysis of capacitance and mobility in InGaAs
- F.M. Bufler
- M. Frey
- et al.
- 2016
- DRC 2016
Conference paper
Publications
14 results for Éamon O'Connor
First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Conference paperMaterial and device integration for hybrid III-V/SiGe CMOS technology
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Conference paperAdvanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Conference paper