Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets
- G.A. Antonelli
- G. Jiang
- et al.
- 2012
- Microelectronic Engineering
Publications
22 results for F. Baumann
Mn-dopant segregation as an indicator of barrier integrity in 32nm groundrule Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder H. Baumann
- et al.
- 2011
- ADMETA 2011
Moisture uptake impact on damage layer of porous low-k film in 80nm-pitched Cu interconnects
- M. Tagami
- Atsushi Ogino
- et al.
- 2011
- ECS Meeting 2011
CVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IITC/MAM 2011
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IEEE Electron Device Letters
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Effect of TaN stoichiometry on barrier oxidation and defect density in 32nm Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder Baumann
- et al.
- 2010
- MRS Online Proceedings Library