Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2010
- Electrochemical and Solid-State Letters
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144 results for Daniel Edelstein
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009
Optimized interfacial strength for dense and porous SiCOH
- D.D. Restaino
- Steve Molis
- et al.
- 2007
- ADMETA 2007
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
Performance and reliability of airgaps for advanced BEOL Interconnects
- S.V. Nitta
- D. Edelstein
- et al.
- 2008
- IITC 2008
Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
- A. Grill
- D. Edelstein
- et al.
- 2008
- Journal of Applied Physics