Publications

2 results for Hyunsung Jung

First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- - Matthias Gottwald
  - Guohan Hu
  - et al.
- 2024
- VLSI Technology and Circuits 2024
Conference paper
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
- - Guohan Hu
  - Jonathan Sun
  - et al.
- 2021
- IEDM 2021
Conference paper