Improved Air Spacer for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- IEEE Transactions on Electron Devices
Publications
10 results for Kangguo Cheng
Bottom electrode properties and electrical field cycling effects on hfox based resistive switching memory device
- J. Li
- Youngseok Kim
- et al.
- 2020
- ISTFA 2020
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- VLSI Technology 2020
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps
- Kangguo Cheng
- Joseph W. Lyding
- 2003
- IEEE Electron Device Letters
Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces
- Kangguo Cheng
- Jinju Lee
- et al.
- 2002
- IEEE Transactions on Electron Devices
Deuterium passivation of interface traps in MOS devices
- Kangguo Cheng
- Karl Hess
- et al.
- 2001
- IEEE Electron Device Letters
Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications
- Jinju Lee
- Kangguo Cheng
- et al.
- 2000
- Materials Research Society Symposium-Proceedings