Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- ESSDERC 2013
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158 results for Jean Fompeyrine
III-V heterostructure-on-insulator for strain studies in n-InGaAs channels
- P. Weigele
- Lukas Czornomaz
- et al.
- 2013
- ULIS 2013
Electro-optical active barium titanate thin films in silicon photonics devices
- Stefan Abel
- Thilo Stöferle
- et al.
- 2013
- IPRSN 2013
Physical and electrical properties of scaled gate stacks on Si/passivated In0.53Ga0.47As
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- ECS Transactions
Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012
Electro-optical properties of barium titanate films epitaxially grown on silicon
- Stefan Abel
- Daniele Caimi
- et al.
- 2012
- SPIE OPTO 2012
Self-aligned S/D regions for InGaAs MOSFETs
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2011
- ESSDERC 2011
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Dirk Pfeiffer
- et al.
- 2010
- ECS Transactions
Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009