Recommended Methods to Study Resistive Switching DevicesMario LanzaH.-S. Philip Wonget al.2018Advanced Electronic MaterialsReview
Dielectric breakdown mechanisms in gate oxidesSalvatore LombardoJames H. Stathiset al.2005Journal of Applied PhysicsReview
Breakdown transients in ultra-thin gate oxynitridesS. LombardeF. Palumboet al.2004ICICDT 2004Conference paper