BiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
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236 results for Keith A. Jenkins
Measurement of VLSI Power Supply Current by Electron-Beam Probing
- Keith A. Jenkins
- Robert L. Franch
- 1992
- IEEE Journal of Solid-State Circuits
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation
- Keith A. Jenkins
- P. Agnello
- et al.
- 1992
- Applied Physics Letters
Verifying SRAM Designs
- Keith A. Jenkins
- Scott E. Doyle
- 1992
- IEEE Circuits and Devices Magazine
A novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- Keith A. Jenkins
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Use of voltage contrast to locate defects in patterned high-Tc films
- Keith A. Jenkins
- Byungdu Oh
- 1991
- Journal of Applied Physics