Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronicsCheng-Wei ChengKuen-Ting Shiuet al.2013Nature Communications
High mobility In 0.53Ga 0.47As quantum-well metal oxide semiconductor field effect transistor structuresLi YangCheng-Wei Chenget al.2012Journal of Applied Physics
The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistorsCheng-Wei ChengGeorge Apostolopouloset al.2011Journal of Applied Physics