Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
- T. Suski
- J. Jun
- et al.
- 1998
- Journal of Applied Physics
Paper
Publications
3 results for A. Pelzmann
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
- S. Strite
- A. Pelzmann
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
PaperImproved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
- A. Pelzmann
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Paper