Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
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119 results for Stephan A. Cohen
Analysis of an extreme low-κ organosilicate dielectric film exposed to representative plasmas and to a restorative process
- M. Colburn
- S.V. Nitta
- et al.
- 2003
- AMC 2003
Structure-property relationships of hydrido organo siloxane polymer (HOSP)
- Ann R. Fornof
- Christy Tyberg
- et al.
- 2002
- Polymer Bulletin
Film properties and integration of a composite PECVD FSG film
- R. Wistrom
- G. Bomberger
- et al.
- 2002
- IITC 2002
Transistor-limited constant voltage stress of gate dielectrics
- B.P. Linder
- D.J. Frank
- et al.
- 2001
- VLSI Technology 2001
Opportunities and challenges in ultra low k dielectrics for interconnect applications
- S. Purushothaman
- S.V. Nitta
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant
- Mihail P. Petkov
- Marc H. Weber
- et al.
- 1999
- Journal of Applied Physics
Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films
- Mihail P. Petkov
- Marc H. Weer
- et al.
- 1999
- Applied Physics Letters