Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
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119 results for Stephan A. Cohen
Analysis of an extreme low-κ organosilicate dielectric film exposed to representative plasmas and to a restorative process
- M. Colburn
- S.V. Nitta
- et al.
- 2003
- AMC 2003
Film properties and integration of a composite PECVD FSG film
- R. Wistrom
- G. Bomberger
- et al.
- 2002
- IITC 2002
Transistor-limited constant voltage stress of gate dielectrics
- B.P. Linder
- D.J. Frank
- et al.
- 2001
- VLSI Technology 2001
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.
- S. Cohen
- T.O. Sedgwick
- et al.
- 1983
- MRS Proceedings 1983
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- VLSI Science and Technology 1983
SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.
- C.M. Ransom
- T.O. Sedgwick
- et al.
- 1983
- ECS Meeting 1983