BEOL integration of highly damage -resistant porous ultra low-k material using direct CMP and via-first process
- T. Iijima
- Q. Lin
- et al.
- 2006
- IITC 2006
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119 results for Stephan A. Cohen
Laser spike annealing: A novel post-porosity treatment for toughening of low-k organosilicates
- Willi Volksen
- Geraud Dubois
- et al.
- 2006
- VMIC 2006
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
Lower resistance scaled metal contacts to silicide for advanced CMOS
- A. Topol
- C. Sheraw
- et al.
- 2006
- VLSI Technology 2006
Laser spike annealing: A novel post-porosity treatment for significant toughening of low-k organosilicates
- Willi Volksen
- Geraud Dubois
- et al.
- 2006
- IITC 2006
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
- J.R. Lloyd
- C.E. Murray
- et al.
- 2006
- Microelectronics Reliability
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectrics
- S.V. Nitta
- S. Purushothaman
- et al.
- 2005
- AMC 2005