Impact of Cu microstructure on electromigration reliability
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- IITC 2007
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129 results for Eric G. Liniger
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
Comparison of electromigration in Cu interconnects with ALD or PVD TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2006
- ECS Meeting 2006
The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
- J.R. Lloyd
- C.E. Murray
- et al.
- 2006
- Microelectronics Reliability
Effect of oxygen at the Cu-SiCxNy interface on electromigration performance of interconnect structures
- E. Liniger
- C. Dziobkowski
- 2006
- Thin Solid Films
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films
Damascene copper integration impact on electomigration and stress migration
- Anthony K. Stamper
- H. Baks
- et al.
- 2005
- AMC 2005