65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
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129 results for Eric G. Liniger
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Damascene copper integration impact on electomigration and stress migration
- Anthony K. Stamper
- H. Baks
- et al.
- 2005
- AMC 2005
Theory for electromigration failure in Cu conductors
- J.R. Lloyd
- C.E. Murray
- et al.
- 2005
- International Workshop on Stress-Induced Phenomena in Metallization 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Effect of moisture on the Time Dependent Dielectric Breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric
- J.R. Lloyd
- T.M. Shaw
- et al.
- 2005
- IIRW 2005
Low-k BEOL mechanical modeling
- Xiao Hu Liu
- Michael W. Lane
- et al.
- 2004
- ADMETA 2004
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004