Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
- S. Strite
- A. Pelzmann
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
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4 results for J. Jun
High-pressure synthesis, crystal growth, phase diagrams, structural and magnetic properties of Y2Ba4CunO2n+x, HgBa2Can-1CunO2n+2+δ and quasi-one-dimensional cuprates
- J. Karpinski
- G.I. Meijertt
- et al.
- 1999
- Supercond Sci Technol
Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
- T. Suski
- J. Jun
- et al.
- 1998
- Journal of Applied Physics
Effect of Pb doping on the structure of HgBa2CuO4+δ single crystals
- H. Schwer
- E.M. Kopnin
- et al.
- 1997
- Physica C: Superconductivity and its Applications