Low-Frequency Noise in InGaAs-OI TransistorsCarlos MarquezCarlos Navarroet al.2024Journal of Applied PhysicsPaper
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nmCarlos NavarroSiegfried Karget al.2019Nature ElectronicsPaper
InGaAs Capacitor-Less DRAM Cells TCAD DemonstrationCarlos NavarroSantiago Navarroet al.2018IEEE J-EDSPaper
Towards InGaAs MSDRAM capacitor-less cellsCarlos NavarroSantiago Navarroet al.2018ECS Meeting 2018Conference paper