20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon
- Axel Tessmann
- Arnulf Leuther
- et al.
- 2019
- IEEE JSSC
Publications
3 results for Axel Tessmann
A 250 GHz millimeter wave amplifier MMIC based on 30 nm metamorphic InGaAs MOSFET technology
- Arnulf Leuther
- Matthias Ohlrogge
- et al.
- 2017
- EuMIC 2017
80 nm InGaAs MOSFET W-band low noise amplifier
- Arnulf Leuther
- Matthias Ohlrogge
- et al.
- 2017
- IMS 2017