Publications

9 results for Ilesanmi Adesida

Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
- - Wu Lu
  - Steven J. Koester
  - et al.
- 2000
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- - Wu Lu
  - Almaz Kuliev
  - et al.
- 2000
- IEEE Transactions on Electron Devices
Paper
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- - W. Lu
  - X.W. Wang
  - et al.
- 1999
- IEEE Electron Device Letters
Paper
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
- - Patrick Fay
  - Mohamed Arafa
  - et al.
- 1997
- Journal of Lightwave Technology
Paper
Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- - I. Adesida
  - M. Arafa
  - et al.
- 1997
- Microelectronic Engineering
Paper
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- - M. Arafa
  - K. Ismail
  - et al.
- 1996
- IEEE Electron Device Letters
Paper
DC and RF performance of 0.25 μm p-type SiGe MODFET
- - M. Arafa
  - P. Fay
  - et al.
- 1996
- IEEE Electron Device Letters
Paper
High speed p-type SiGe modulation-doped field-effect transistors
- - M. Arafa
  - P. Fay
  - et al.
- 1996
- IEEE Electron Device Letters
Paper
High-transconductance p-type SiGe modulation-doped field-effect transistor
- - M. Arafa
  - P. Fay
  - et al.
- 1995
- Electronics Letters
Paper