Silicon Germanium heterojunction bipolar transistor ESD power clamps and the Johnson LimitSteven H. VoldmanAlan Botulaet al.2001EOS/ESD 2001
Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistorsS. VoldmanP. Julianoet al.2000EOS/ESD 2000
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistorsS. VoldmanP. Julianoet al.2000Annual Proceedings - Reliability Physics (Symposium)