Publications

8 results for P. Saunders

Retardation of arsenic diffusion in silicon-germanium by co-implantation
- - Omer Dokumaci
  - Paul Ronsheim
  - et al.
- 2004
- ECS Meeting 2004
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS device
- - K.-L. Lee
  - F. Cardone
  - et al.
- 2004
- ECS Meeting 2004
A Simplified Hybrid Orientation Technology (SHOT) for high performance CMOS
- - B. Doris
  - Y. Zhang
  - et al.
- 2004
- VLSI Technology 2004
20 nm N ⁺ abrupt junction formation in Strained Si/Si _1-xGe _x MOS device
- - K.L. Lee
  - F. Cardone
  - et al.
- 2003
- IEDM 2003
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- - K. Rim
  - K.K. Chan
  - et al.
- 2003
- IEDM 2003
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- - Jakub Kedzierski
  - Edward Nowak
  - et al.
- 2002
- IEDM 2002
Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS device
- - K.L. Lee
  - J.O. Chu
  - et al.
- 2002
- IEDM 2002
Modeling of the diffusion of implanted boron in strained Si/Si_1-xGe_x
- - Huilong Zhu
  - Kam-Leung Lee
  - et al.
- 2002
- SISPAD 2002