Publications

9 results for Joseph W. Lyding

An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps
- - Kangguo Cheng
  - Joseph W. Lyding
- 2003
- IEEE Electron Device Letters
Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces
- - Kangguo Cheng
  - Jinju Lee
  - et al.
- 2002
- IEEE Transactions on Electron Devices
Deuterium passivation of interface traps in MOS devices
- - Kangguo Cheng
  - Karl Hess
  - et al.
- 2001
- IEEE Electron Device Letters
Isotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications
- - Jinju Lee
  - Kangguo Cheng
  - et al.
- 2000
- Materials Research Society Symposium-Proceedings
Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)
- - E.T. Foley
  - A.F. Kam
  - et al.
- 1998
- Physical Review Letters
Breaking individual chemical bonds via STM-induced excitations
- - Ph. Avouris
  - R.E. Walkup
  - et al.
- 1996
- Surface Science
STM-induced H atom desorption from Si(100): Isotope effects and site selectivity
- - Ph. Avouris
  - R.E. Walkup
  - et al.
- 1996
- Chemical Physics Letters
Ultrahigh vacuum scanning tunneling microscope-based nanolithography and selective chemistry on silicon surfaces
- - J.W. Lyding
  - T.-C. Shen
  - et al.
- 1996
- Israel Journal of Chemistry
Atomic-scale desorption through electronic and vibrational excitation mechanisms
- - T.-C. Shen
  - C. Wang
  - et al.
- 1995
- Science