An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps
- Kangguo Cheng
- Joseph W. Lyding
- 2003
- IEEE Electron Device Letters
Paper
Publications
9 results for Joseph W. Lyding
Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces
- Kangguo Cheng
- Jinju Lee
- et al.
- 2002
- IEEE Transactions on Electron Devices
PaperDeuterium passivation of interface traps in MOS devices
- Kangguo Cheng
- Karl Hess
- et al.
- 2001
- IEEE Electron Device Letters
PaperIsotope exchange in hydrogenated silicon-oxynitride (SiON) for 1.55μm optical waveguide applications
- Jinju Lee
- Kangguo Cheng
- et al.
- 2000
- Materials Research Society Symposium-Proceedings
PaperCryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)
- E.T. Foley
- A.F. Kam
- et al.
- 1998
- Physical Review Letters
PaperBreaking individual chemical bonds via STM-induced excitations
- Ph. Avouris
- R.E. Walkup
- et al.
- 1996
- Surface Science
PaperSTM-induced H atom desorption from Si(100): Isotope effects and site selectivity
- Ph. Avouris
- R.E. Walkup
- et al.
- 1996
- Chemical Physics Letters
PaperUltrahigh vacuum scanning tunneling microscope-based nanolithography and selective chemistry on silicon surfaces
- J.W. Lyding
- T.-C. Shen
- et al.
- 1996
- Israel Journal of Chemistry
PaperAtomic-scale desorption through electronic and vibrational excitation mechanisms
- T.-C. Shen
- C. Wang
- et al.
- 1995
- Science
Paper