Low phase noise 5 GHz VCOs in 0.13 μm SOI and bulk CMOSDavid I. SandersonJonghae Kimet al.2006ICSICT 2006
Enabling RFCMOS solutions for emerging advanced applicationsJohn J. PekarikDouglas D. Coolbaughet al.2005GAAS 2005
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 psM. KhaterJ.-S. Riehet al.2004IEDM 2004
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHzJ.-S. RiehD.R. Greenberget al.2004RFIC 2004