Effects of Post Metallization Annealing on InGaAs-on-Insulator MOSFETs on Si
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- EUROSOI-ULIS 2019
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41 results for C. B. Zota
High Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- IEDM 2018
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- IEDM 2018
InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS with Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- IEEE J-EDS
InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
Scaling without scaling: A paradigm shift in the semiconductor industry
- C. B. Zota
- Lukas Czornomaz
- et al.
- 2018
- Europhysics News
InGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- VLSI Technology 2018
InGaAs FinFETs 3D sequentially integrated on FDSOI Si CMOS with record perfomance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- ESSDERC 2018
Static and low frequency noise characterization of InGaAs MOSFETs and FinFETs on insulator
- T.A. Karatsori
- K. Bennamane
- et al.
- 2018
- ESSDERC 2018
III-V heterostructure tunnel field-effect transistor
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Journal of Physics Condensed Matter