Publications

28 results for Clarissa Convertino

Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- - Carlos Navarro
  - Siegfried Karg
  - et al.
- 2019
- Nature Electronics
High-performance InGaAs FinFETs with raised source/drain extensions
- - Clarissa Convertino
  - C. B. Zota
  - et al.
- 2019
- Japanese Journal of Applied Physics
High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
- - C. B. Zota
  - Clarissa Convertino
  - et al.
- 2019
- IEEE Electron Device Letters
Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities
- - Clarissa Convertino
  - C. B. Zota
  - et al.
- 2019
- EUROSOI-ULIS 2019
Effects of Post Metallization Annealing on InGaAs-on-Insulator MOSFETs on Si
- - C. B. Zota
  - Clarissa Convertino
  - et al.
- 2019
- EUROSOI-ULIS 2019
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- - Clarissa Convertino
  - C. B. Zota
  - et al.
- 2018
- IEDM 2018
High Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- - C. B. Zota
  - Clarissa Convertino
  - et al.
- 2018
- IEDM 2018
InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS with Record Performance
- - Clarissa Convertino
  - C. B. Zota
  - et al.
- 2019
- IEEE J-EDS
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- - Mattias Borg
  - Lynne Gignac
  - et al.
- 2018
- Nanotechnology
InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- - Clarissa Convertino
  - C. B. Zota
  - et al.
- 2018
- Materials