Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy
- Z.M. Rittersma
- J.C. Hooker
- et al.
- 2006
- Journal of Applied Physics
Publications
4 results for M. Rosmeulen
Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- VLSI Technology 2003
Characterization of the VT-instability in SiO2 / HfO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Characterization of the VT-instability in SIO2/HFO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003