Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al2 O3 and Hf O2
- Martin M. Frank
- Yu Wang
- et al.
- 2007
- JES
Paper
Publications
7 results for Yves J. Chabal
Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition
- Martin M. Frank
- Glen D. Wilk
- et al.
- 2005
- Applied Physics Letters
PaperGas phase chlorination of hydrogen-passivated silicon surfaces
- Sandrine Rivillon
- Fabrice Amy
- et al.
- 2004
- Applied Physics Letters
PaperHafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects
- Martin M. Frank
- Safak Sayan
- et al.
- 2004
- Materials Science and Engineering: B
Conference paperSuppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
- L.F. Edge
- D.G. Schlom
- et al.
- 2004
- Applied Physics Letters
PaperMetallic contact formation for molecular electronics: Interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols
- Bert De Boer
- Martin M. Frank
- et al.
- 2004
- Langmuir
PaperAn infrared study of H8Si8O12 cluster adsorption on Si(100) surfaces
- Joseph Eng Jr.
- Krishnan Raghavachari
- et al.
- 1998
- Journal of Chemical Physics
Paper