Publications

9 results for R. Hammond

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f_max
- - S.J. Koester
  - R. Hammond
  - et al.
- 2001
- IEEE Electron Device Letters
Low-noise SiGe pMODFETs on sapphire with 116 GHz f_max
- - S.J. Koester
  - R. Hammond
  - et al.
- 2000
- DRC 2000
Silicon-on-sapphire for RF Si systems 2000
- - I. Lagnado
  - P.R. De La Houssaye
  - et al.
- 2000
- SiRF 2000
Extremely high transconductance Ge/Si_0.4Ge_0.6 p-MODFET's grown by UHV-CVD
- - S.J. Koester
  - R. Hammond
  - et al.
- 2000
- IEEE Electron Device Letters
High transconductance 0.1 μm Ge/Si_0.4Ge_0.6 Schottky-gated p-MODFETs
- - R. Hammond
  - S.J. Koester
  - et al.
- 1999
- DRC 1999
High-performance SiGe pMODFETs grown by UHV-CVD
- - S.J. Koester
  - R. Hammond
  - et al.
- 1999
- EDMO 1999
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- - W. Lu
  - X.W. Wang
  - et al.
- 1999
- IEEE Electron Device Letters
High-performance 0.1μm gate-length Ge/Si_0.4Ge_0.6 p-channel MODFETs
- - R. Hammond
  - S.J. Koester
  - et al.
- 1999
- Electronics Letters
Technique for producing highly planar Si/SiO_0.64Ge_0.36/Si metal-oxide-semiconductor field effect transistor channels
- - T.J. Grasby
  - C.P. Parry
  - et al.
- 1999
- Applied Physics Letters