The dielectric breakdown in gate oxides under high field stress
- S. Lombardo
- J.H. Stathis
- et al.
- 2009
- ECS Meeting 2009
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169 results for Jim Stathis
A new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- SBMicro 2008
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Gate oxide reliability for nano-scale CMOS
- 2006
- MIEL 2006
Gate oxide reliability for nano-scale CMOS
- 2005
- IPFA 2005
A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
A study of negative bias temperature instability (NBTI) in pFETs
- Sufi Zafar
- James Stathis
- et al.
- 2005
- ECS Meeting 2005
Charge trapping & NBTI in high k gate dieectric stacks
- Sufi Zafar
- A.C. Callegari
- et al.
- 2005
- ECS Meeting 2005
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
- J.H. Stathis
- R. Bolam
- et al.
- 2005
- INFOS 2005