Publications

169 results for Jim Stathis

The dielectric breakdown in gate oxides under high field stress
- - S. Lombardo
  - J.H. Stathis
  - et al.
- 2009
- ECS Meeting 2009
A new methodology for characterizing the progressive BD of HfO ₂/SiO₂ metal gate stacks
- - R. Pagano
  - S. Lombardo
  - et al.
- 2008
- SBMicro 2008
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- - R. Pagano
  - S. Lombardo
  - et al.
- 2008
- Microelectronics Reliability
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- - M. Chudzik
  - B. Doris
  - et al.
- 2007
- VLSI Technology 2007
Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions
- - E. Amat
  - R. Rodríguez
  - et al.
- 2007
- Microelectronics Reliability
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- - J. Martín-Martínez
  - R. Rodríguez
  - et al.
- 2007
- Microelectronics Reliability
A comparative study of NBTI and PBTI (Charge Trapping) in SiO ₂/HfO₂ stacks with FUSI, TiN, Re gates
- - S. Zafar
  - Y.-H. Kim
  - et al.
- 2006
- VLSI Technology 2006
Gate oxide reliability for nano-scale CMOS
- - J.H. Stathis
- 2006
- MIEL 2006
Hybrid-orientation technology (HOT): Opportunities and challenges
- - Min Yang
  - Victor W.C. Chan
  - et al.
- 2006
- IEEE Transactions on Electron Devices
The negative bias temperature instability in MOS devices: A review
- - J.H. Stathis
  - S. Zafar
- 2006
- Microelectronics Reliability