High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
- G. Ribes
- P. Mora
- et al.
- 2010
- IRPS 2010
Conference paper
Publications
169 results for Jim Stathis
Hot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Conference paperPBTI relaxation dynamics after ac VS. DC stress in high-K/metal gate stacks
- K. Zhao
- J.H. Stathis
- et al.
- 2010
- IRPS 2010
Conference paperReliability of advanced high-k/metal-gate n-FET devices
- J.H. Stathis
- M. Wang
- et al.
- 2010
- Microelectronics Reliability
PaperExtremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Conference paperThe effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
- Barry P. Linder
- Eduard Cartier
- et al.
- 2009
- IRPS 2009
Conference paperImpact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance
- Aditya Bansal
- Rahul Rao
- et al.
- 2009
- IRPS 2009
Conference paperCopper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Conference paperRecovery study of negative bias temperature instability
- Miaomiao Wang
- Sufi Zafar
- et al.
- 2009
- Microelectronic Engineering
PaperImpacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
- Aditya Bansal
- Rahul Rao
- et al.
- 2009
- Microelectronics Reliability
Paper