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Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETsMiaomiao WangX. Miaoet al.2016IEDM 2016
Applications of clustering model to bimodal distributions for dielectric breakdownErnest Y. WuRonald Bolamet al.2017JVSTB
Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applicationsErnest Y. WuJames Stathiset al.2016IRPS 2016
Process optimizations for NBTI/PBTI for future replacement metal gate technologiesBarry P. LinderA. Dasguptaet al.2016IRPS 2016
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A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETsTenko YamashitaS. Mehtaet al.2015VLSI Technology 2015
Low-κ and High-κ breakdown statistics with variability: Clustering model versus reconstruction methodology (Invited)Ernest Y. WuBaozhen Liet al.2015IPFA 2015
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFETMiaomiao WangZuoguang Liuet al.2015IRPS 2015
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)Ernest Y. WuJames Stathiset al.2015IRPS 2015