Controversial issues in negative bias temperature instability
- James H. Stathis
- Souvik Mahapatra
- et al.
- 2018
- Microelectronics Reliability
Review
Publications
169 results for Jim Stathis
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
Conference paperModeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IEDM 2017
Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Conference paperUltrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- Narendra Parihar
- Uma Sharma
- et al.
- 2018
- IEEE T-ED
PaperElectron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
PaperHot carrier reliability in ultra-scaled sige channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2017
- ASICON 2017
Conference paperA stochastic model for impact of LER on BEOL TDDB
- Ramachandran Muralidhar
- Ernest Y. Wu
- et al.
- 2017
- IRPS 2017
Conference paperComparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IRPS 2017
Conference paperA new and holistic modelling approach for impact of line-edge roughness on dielectric reliability
- Ernest Y. Wu
- Ramachandran Muralidhar
- et al.
- 2017
- IRPS 2017
Conference paper