Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
- Aditya Bansal
- Rahul Rao
- et al.
- 2009
- Microelectronics Reliability
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169 results for Jim Stathis
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
- E. Amat
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
Hybrid-orientation technology (HOT): Opportunities and challenges
- Min Yang
- Victor W.C. Chan
- et al.
- 2006
- IEEE Transactions on Electron Devices
The negative bias temperature instability in MOS devices: A review
- J.H. Stathis
- S. Zafar
- 2006
- Microelectronics Reliability
Dielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
Reliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
a-SiGe:H and a-SiGec:H black-matrix films for Liquid Crystal Displays
- Yoshimine Kato
- Yoshimasa Kaida
- et al.
- 2004
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
- F. Crupi
- C. Ciofi
- et al.
- 2002
- Applied Physics Letters