Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Japanese Journal of Applied Physics
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169 results for Jim Stathis
Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, Part-I: DC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Controversial issues in negative bias temperature instability
- James H. Stathis
- Souvik Mahapatra
- et al.
- 2018
- Microelectronics Reliability
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- Narendra Parihar
- Uma Sharma
- et al.
- 2018
- IEEE T-ED
Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
Applications of clustering model to bimodal distributions for dielectric breakdown
- Ernest Y. Wu
- Ronald Bolam
- et al.
- 2017
- JVSTB
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2013
- Applied Physics Letters
Reliability of advanced high-k/metal-gate n-FET devices
- J.H. Stathis
- M. Wang
- et al.
- 2010
- Microelectronics Reliability
Recovery study of negative bias temperature instability
- Miaomiao Wang
- Sufi Zafar
- et al.
- 2009
- Microelectronic Engineering