Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
Paper
Publications
169 results for Jim Stathis
The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
PaperOn the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
- F. Crupi
- C. Ciofi
- et al.
- 2002
- Applied Physics Letters
PaperReliability limits for the gate insulator in CMOS technology
- 2002
- IBM J. Res. Dev
ReviewDependence of post-breakdown conduction on gate oxide thickness
- S. Lombardo
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Conference paperAnalysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Conference paperPhysical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
- 2001
- IEEE T-DMR
PaperPhysical models of ultra thin oxide reliability in CMOS devices and implications for circuit reliability
- 2001
- IWGI 2001
Conference paperTransistor-limited constant voltage stress of gate dielectrics
- B.P. Linder
- D.J. Frank
- et al.
- 2001
- VLSI Technology 2001
Conference paperAnode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
- D.J. DiMaria
- J.H. Stathis
- 2001
- Journal of Applied Physics
Paper