Thickness measurement of ultra-thin gate dielectrics under inversion conditionW. ZhuMukesh Khareet al.2001International Symposium on VLSI Technology, Systems, and Applications, ProceedingsPaper
Breakdown measurements of ultra-thin SiO2 at low voltageJ.H. StathisA. Vayshenkeret al.2000VLSI Technology 2000Conference paper
Nucleation of chemical vapor deposited silicon nitride on silicon dioxideM. CopelP.R. Varekampet al.1999Applied Physics LettersPaper