Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phononsP. SrinivasanB.P. Linderet al.2007Microelectronic EngineeringPaper
Effect of Ge surface nitridation on the Ge/HfO2/Al MOS devicesReenu GargDurga Misraet al.2006IEEE T-DMRPaper
Effect of surface nitridation on the Ge/HfO2 interfaceR. GargD. Misraet al.2005ECS Meeting 2005Conference paper