Publications

36 results for David C. Ahlgren

3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- - Basanth Jagannathan
  - Mounir Meghelli
  - et al.
- 2003
- IEEE Electron Device Letters
Noise performance scaling in high-speed silicon RF technologies
- - D.R. Greenberg
  - S. Sweeney
  - et al.
- 2003
- SiRF 2003
Sige HBT performance and reliability trends through f_T of 350GHz
- - Greg Freeman
  - Jae-Sung Rieh
  - et al.
- 2003
- IRPS 2003
Foundation of rf CMOS and SiGe BiCMOS technologies
- - James S. Dunn
  - David C. Ahlgren
  - et al.
- 2003
- IBM J. Res. Dev
Noise performance of a low base resistance 200 GHz SiGe technology
- - D.R. Greenberg
  - B. Jagannathan
  - et al.
- 2002
- IEDM 2002
A 4.2-ps ECL ring-oscillator in a 285-GHz f _MAX SiGe technology
- - Basanth Jagannathan
  - Mounir Meghelli
  - et al.
- 2002
- IEEE Electron Device Letters
Self-aligned SiGe NPN transistors with 285 GHz f _MAX and 207 GHz f _T in a manufacturable technology
- - B. Jagannathan
  - M. Khater
  - et al.
- 2002
- IEEE Electron Device Letters
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- - Seshadri Subbanna
  - Gregory Freeman
  - et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- - S. Subbanna
  - L. Larson
  - et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- - D.R. Greenberg
  - S. Sweeney
  - et al.
- 2001
- Technical Digest - International Electron Devices Meeting