Demonstration of npn InAs bipolar transistors with inverted base dopingPaul E. DoddMichael L. Lovejoyet al.1996IEEE Electron Device LettersPaper
Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAsE.S. HarmonM.L. Lovejoyet al.1993Applied Physics LettersPaper
Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbonM.L. LovejoyM.R. Mellochet al.1992Applied Physics LettersPaper